| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor having a new electrode structure which can almost maintain on-state current value even if parasitic capacitance value generated in a portion where a source electrode (drain electrode) and a gate electrode overlap. <P>SOLUTION: To reduce parasitic capacitance value by making a shape of a source electrode and a drain electrode of a transistor into a comb tooth shape. In addition, curve line current flowed from a side of an electrode tooth can be generated by controlling the width of a tip of the comb tooth-shaped electrode and a distance between the electrode teeth. This curve line current compensates reducing straight line current by making the electrode shape into a comb tooth shape; therefore, even if parasitic capacitance value is reduced, on-state current value can be almost maintained to the on-state current value before the reduction of the parasitic capacitance value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
