| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent deposition of conductive reaction products without corroding a TCP window excessively. <P>SOLUTION: An inductively coupled plasma etching apparatus is provided with a chamber and a window for sealing the opening of a chamber top part. The window has an internal surface exposed to the internal area of the chamber. A metallic plate which functions as a Faraday shield is set up above the window separately from the window. A coil is conductively coupled with the metallic plate at a connecting position configured to generate such a peak-to-peak voltage that optimally reduces the sputtering of the internal surface of the window and substantially simultaneously prevents deposition of by-products of etching on the internal surface of the window. In another embodiment, this apparatus is provided with a controller for impressing the peak-to-peak voltage upon the metallic plate from the outside. The controller is provided with an oscillation circuit, a matching circuit, an RF power source, and feedback control for monitoring the impressed peak-to-peak voltage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
