| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid crystal panel substrate capable of solving the following problems: since a silicon nitride film formed by a low-pressure CVD method, which is generally used as a passivation film in a semiconductor device, has approximately 10% film thickness variation, when the silicon nitride film is used for a reflective liquid crystal panel, the reflective liquid crystal panel has disadvantages such as great variations in the reflectance and variations in the refractive index of the liquid crystal due to the film thickness variation of the passivation film. <P>SOLUTION: A liquid crystal panel substrate is configured so that reflective electrodes (14) are formed on a substrate (1) in a matrix manner and individual transistors are formed corresponding to individual reflective electrodes (14). The liquid crystal panel substrate is further configured so that a voltage applied to the reflective electrodes (14) through the individual transistors. Moreover, the liquid crystal panel substrate is configured so that a silicon oxide film having a thickness of from 500 through 2000 angstroms is used as a passivation film (17) and the thickness of the silicon oxide film is set to an appropriate value corresponding to the wavelength of incident light. <P>COPYRIGHT: (C)2012,JPO&INPIT |
