| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a reduced parasitic capacitance between wiring and an inductor, while maintaining flatness of a wiring layer. <P>SOLUTION: The semiconductor device includes: a first interlayer insulating film 104 formed on a semiconductor substrate 101; a wiring 106 buried in a portion positioned inside a wiring formation area of the first interlayer insulating film 104; a first dummy pattern 107 buried in a portion positioned inside the wiring formation area of the first interlayer insulating film 104; a second dummy pattern 108 positioned inside an inductor area of the first interlayer insulating film 104; a second interlayer insulating film formed above the first interlayer insulating film 104; and an inductor 111 formed above the second dummy pattern 108 and buried in a portion positioned in the inductor area of the second interlayer insulating film. As the second dummy pattern 108, metal is not formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
