| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can lengthen the lifetime of a dicing blade, and reduce damage of an edge portion thereof. <P>SOLUTION: In a functional element region 2, an upper wiring 29 connected to a lower wiring 25 and a cap metal layer 32 are formed between the surface of a third interlayer insulating film 27 and a passivation film 33. The lower wiring 25 is formed of a wiring material other than Cu, and the upper wiring 29 is formed of Cu. A portion of th cap metal layer 32 which is exposed from a pad opening 34 of the passivation film 33 is a first pad 6. In a scribe region 3, the cap metal layer 32 connected to the lower wire 25 is formed between the surface of the third interlayer insulating film 27 and the passivation film 33. A portion of the cap metal 32 which is exposed from a pad opening 44 of the passivation film 33 is a second pad 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
