发明名称 MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR INITIALIZING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a MRAM which can be initialized free of the effect of variations within a plane of an underlying hard layer. <P>SOLUTION: The MRAM has: a magnetic recording layer 10 of ferromagnetism; a ferromagnetic magnetization fixed layer 30 with its magnetization fixed; a non-magnetic spacer layer 20 provided between the magnetic recording layer 10 and the magnetization fixed layer 30; and conductive layers 14a and 14b provided on upper or bottom portions of both ends of the magnetic recording layer 10. The magnetic recording layer 10 can be inverted in magnetization, and includes: a magnetization inversion region 13 joined to the magnetization fixed layer 30 through the spacer layer 20; a first magnetization region 11a having magnetization in a first direction and provided in parallel with the magnetization inversion region 13; a second magnetization region 11b having magnetization in a second direction and provided in parallel with the magnetization inversion region 13; a first inclined region 12a bonded with the magnetization inversion region 13 and the first magnetization region 11a to form a given inclination angle &phiv; with them; and a second inclined region 12b bonded with the magnetization inversion region 13 and the second magnetization region 11b to form the given inclination angle &phiv; with them. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011249356(A) 申请公布日期 2011.12.08
申请号 JP20100117534 申请日期 2010.05.21
申请人 RENESAS ELECTRONICS CORP 发明人 KOBAYASHI YOSUKE
分类号 H01L27/105;G11C11/15;H01L21/8246;H01L29/82;H01L43/08 主分类号 H01L27/105
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