METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which an emitter and a gate finger electrode having a desired thickness can be formed without requiring exact control of etching thickness in the etching of a pressure-contact IGBT having an emitter and a gate finger electrode consisting of an extremely thin metal film.

SOLUTION: The method for manufacturing a semiconductor device used in a pressure-contact semiconductor includes: a step for forming a first Al layer on an Si substrate; a step for etching a part of the first Al layer so that an emitter electrode and a gate finger electrode having a desired shape can be obtained; a step for forming an underlying layer consisting of a metal other than Al on the first Al layer; a step for forming a second Al layer on the underlying layer; a step for coating a part of the second Al layer corresponding to the emitter electrode with resist; a step for etching the second Al layer other than the part coated with resist; a step for etching the underlying layer other than the part coated with resist; and a step for removing the resist.

COPYRIGHT: (C)2012,JPO&INPIT