| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a concentration distribution generation method and a process simulator to generate a diffusion concentration distribution considering simply a transition enhanced diffusion (TED) phenomenon. <P>SOLUTION: A concentration distribution generation method and a process simulator perform a defect amount calculation procedure to calculate a defect amount Q<SB POS="POST">I</SB>per unit area of defects introduced to a semiconductor substrate by ion implantation and a defect position calculation procedure to calculate a position d<SB POS="POST">I</SB>to position by condensing a defect concentration distribution in an ion implantation concentration distribution by the ion implantation with a computer and treat the defect concentration distribution like a delta function. <P>COPYRIGHT: (C)2012,JPO&INPIT |
