| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element that can naturally implement a cut-off state of a transistor and increase driving current by selecting the Fermi level of a source region so that the Schottky barrier can be substantially reduced with suppressing the generation of a depletion layer in the neighborhood of the interface with a metal region in a semiconductor region, and a semiconductor element structure having the semiconductor element. <P>SOLUTION: A source region 6 and a drain region 7 have a first metal region 10 and a second metal region 11 which are different in Fermi level. The first metal region 10 is formed of metal having a Fermi level ranging from the energy level at the top of a valence band of a semiconductor region 5 to the intrinsic Fermi level of the semiconductor region 5. The second metal region 11 is formed of metal having a Fermi level ranging from the Fermi level of the first metal region 10 to the energy level at the bottom of a conduction band. <P>COPYRIGHT: (C)2012,JPO&INPIT |
