| 摘要 |
PURPOSE: A semiconductor device and a method for forming the same are provided to prevent a short circuit in a junction area and a well region in the semiconductor substrate. CONSTITUTION: In a semiconductor device and a method for forming the same, an element isolation film(108) is formed on a semiconductor substrate(100). A first junction area(120) is arranged in the active area surface which is defined by the element isolation film. A second junction area(122) and a third junction area(124) are comprised of one side and the other side of the active area. A first contact hole(H1) exposes the first junction area to outside. A second contact hole(H2) exposes the second junction area and the third junction area to outside. A contact plug(128) is buried in the first contact hole and the second contact hole.
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