发明名称 |
HIGH-VOLTAGE AMPLIFIER CIRCUIT FOR MINIMIZATION OF AREA |
摘要 |
PURPOSE: A high voltage amplifier circuit for minimizing an area is provided to reduce parasitic capacitance by designing a low voltage part within a high voltage amplifier circuit. CONSTITUTION: A low voltage part receives a voltage from an inverting input terminal(T1) and a non-inverting input terminal(T2). A high voltage part outputs an amplified voltage through an output terminal(T3) by amplifying the voltage inputted into the low voltage part. A voltage isolating part is connected between the low voltage part and the high voltage part. The voltage isolating part isolates the voltage of the low voltage part and the voltage of the high voltage part. The low voltage part includes a first transistor(P21) which is connected to a bias current source(C2) and the inverting input terminal and a second transistor(P22) which is connected to the bias current source and a non-inverting input terminal. |
申请公布号 |
KR101098164(B1) |
申请公布日期 |
2011.12.23 |
申请号 |
KR20110089908 |
申请日期 |
2011.09.05 |
申请人 |
IMAGIS TECHNOLOGY |
发明人 |
SA, DOO HWAN;MYOUNG, JUN HYOUNG;LEE, JIN KUG;PARK, SUNG UK |
分类号 |
H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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