| 摘要 |
<p>&lt;P&gt;PROBLEM TO BE SOLVED: To provide an effective method for polishing the surface of a silicon carbide single crystal wafer capable of finish polishing (polishing) by removing a work-affected layer from the surface of the chemically stable silicon carbide single crystal wafer roughly polished (lapped) to provide a high quality surface. Ž&lt;P&gt;SOLUTION: The polishing method finish polishes (polishes) the surface of the silicon carbide single crystal roughly polished (lapped) by a diamond mechanical polishing with a colloidal silica slurry having a high oxidizing property or including a large amount of dissolved oxygen to remove the work-affected layer occurred during the diamond mechanical polishing, efficiently creating the high quality surface. Ž&lt;P&gt;COPYRIGHT: (C)2008,JPO&amp;INPIT Ž</p> |
