| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with excellent characteristics and having structure capable of preventing metallic contamination between a semiconductor manufacturing apparatus and a semiconductor device in a semiconductor manufacturing process, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device, nMOS SGT220, is constituted from a first n<SP POS="POST">+</SP>type silicon layer 113, a first gate electrode 236 containing metal, and a second n<SP POS="POST">+</SP>type silicon layer 157, which are collaterally arranged on a first columnar silicon layer 232 vertically arranged on a first planar silicon layer 234. A first insulating film 129 is arranged between the first gate electrode 236 and the first planer silicon layer 234, and a second insulating film 162 is arranged on a top surface of the first gate electrode 236. Additionally, the first gate electrode 236 containing metal is surrounded with the first n<SP POS="POST">+</SP>type silicon layer 113, the second n<SP POS="POST">+</SP>type silicon layer 157, the first insulating film 129, and the second insulating film 162. <P>COPYRIGHT: (C)2012,JPO&INPIT |
