| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching apparatus in which a substrate can be etched stably at a desired etching rate immediately after an unused dielectric is attached or by simply performing dummy electrical discharge for an extremely short time. <P>SOLUTION: A dry etching apparatus 10 comprises: a processing vessel 18 forming a processing space 16 in which a substrate 14 is arranged and process gas is introduced and provided with an opening 20 interconnecting the processing space 16 and the outside; a partition wall 22 having a dielectric attached removably to the processing vessel 18 in order to close the opening 20 when it is attached; and a coil 24 introduced into the processing space 16 through the dielectric of the partition wall 22 and generating electromagnetic waves by plasmatizing the process gas. The surface of the dielectric on the processing space side is the polishing surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
