| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS type solid-state imaging element with a global electronic shutter by which residual image is suppressed and pixels can be miniaturized. <P>SOLUTION: A solid-state imaging element has a plurality of two-dimensionally arrayed pixel parts 100. Each pixel part 100 has: a semiconductor substrate 1; a PD (Photo Diode) 3 that converts incident light photoelectrically into a signal charge; an SD (Storage Diode) 4 formed next to the PD 3; an FD (Floating Diffusion) 5 formed next to the SD 4; a reset drain 9 formed next to the FD 5; a first transfer gate 6 formed between the PD 3 and the SD 4, and that transfers the signal charge from the PD 3 to the SD 4; a second transfer gate 7 formed between the SD 4 and the FD 5, and that transfers the signal charge from the SD 4 to the FD 5; and a first reset gate 8 formed between the FD 5 and the reset drain 9, and that discharges the charge of the FD 5. The SD 4 is connected to a source of a reset transistor with a second reset gate 13. <P>COPYRIGHT: (C)2012,JPO&INPIT |
