| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the yield and reliability of semiconductor devices. <P>SOLUTION: The semiconductor device manufacturing method includes the following steps: removing a Cu film 5b on a barrier metal film 3b except a portion embedded in a wiring recessed portion by the chemical mechanical polishing; forming a layer 6b of an added element on the Cu film 5b in the wiring recessed portion; causing the added element to diffuse from the layer 6b into the Cu film 5b to form an interface and a site in the vicinity thereof in a Cu surface, a grain boundary of Cu crystal grains and a site in the vicinity of the grain boundary, where the concentration of the added element is higher than the inside of the Cu crystal grain, and causing the layer 6b to get oxygen in the Cu film 5b; thereafter removing the surplus layer 6b; and further removing the barrier metal film 3b on a dielectric film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
