| 摘要 |
A magnetron sputtering apparatus comprises, within a vacuum chamber (1), a substrate support (2) holding a substrate (3) with an upward- facing plane substrate surface (4) which is to be coated. The substrate (3) may be a disk of, e.g., 200mm diameter. At a distance from a centre plane (5) two oblong targets (7a, 7b) are symmetrically arranged which are inclined towards the centre plane (5) so as to enclose an acute angle (ß; -ß) of between 8° and 35° with the plane defined by the substrate surface (4). Above the substrate surface (4) a collimator (13) with equidistant rectangular collimator plates is arranged. With this configuration high uniformity of the coating is achievable, in particular, if the distance of the collimator (13) from the substrate surface (4) is chosen as a multiple n of the extension of the collimator (13) perpendicular to the said surface, preferably with n equalling 1 or 2, for suppressing ripple. |
