SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the density of electron traps formed in a GaN based semiconductor layer.

SOLUTION: The semiconductor device comprises: an underlying layer 12 principally comprising AlN formed on an Si substrate 10 in contact therewith; a first buffer layer 14 formed on the underlying layer 12 and receiving a compressive stress therefrom; a second buffer layer 16 formed on the first buffer layer 14; and a GaN based semiconductor layer 18 formed on the second buffer layer 16 and having a composition ratio of Al of 0.1 or less. For the crystal axis length of the face in the second buffer layer 16 on the side of the first buffer layer 14, the crystal axis length of the face opposite from the first buffer layer 14 is close to that of the GaN based semiconductor layer 18, and conduction band bottom energy of the second buffer layer 16 is higher than that of the GaN based semiconductor layer 18.

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