Method for fabrication of semi-conductive structure used to realize micro-electronic devices, involves separating material layer of support wafer from remaining portion of wafer along weakened area

摘要

The method involves gluing a support wafer (200) on a side of a treated semi-conductive structure (100), while using the wafer for manipulating the treated semi-conductive structure. A glued semi-conductive structure (300) is directly fixed on another side of the treated semi-conductive structure, where the glued semi-conductive structure comprises an integrated circuit part. A material layer of the wafer is separated from a remaining portion of the wafer along a weakened area, where the sides of the treated semi-conductive structure are opposite to each other. An independent claim is also included for a semi-conductive structure comprising a strut directly fixed on a first semi-conductive structure.