发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can connect an upper diffusion layer and wiring provided on the upper diffusion layer without increasing contact resistance between the upper diffusion layer and the wiring though the upper diffusion layer is small in plane are. <P>SOLUTION: A semiconductor device comprises a columnar semiconductor 5, an upper diffusion layer 15 formed on the columnar semiconductor 5 and a connection plug 24 formed on the upper diffusion layer 15. The upper diffusion layer 15 has a plurality of island portions each having an island shape viewed from above. The connection plug 24 is made of a conductive material and disposed from at least a part of a top face of a first island portion selected from the plurality of island portions to at least a part of a top face of a second island portion adjacent to the first island portion across a gap between the first island portion and the second island portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012023305(A) |
申请公布日期 |
2012.02.02 |
申请号 |
JP20100161968 |
申请日期 |
2010.07.16 |
申请人 |
ELPIDA MEMORY INC |
发明人 |
KAJITANI KAZUHIKO;KOTABE AKIRA;SASAKO YOSHITAKA;SEKIGUCHI TOMONORI |
分类号 |
H01L29/78;H01L21/768;H01L23/522;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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