| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing its output. <P>SOLUTION: A semiconductor device comprises: a source electrode 12, provided on a semiconductor substrate 10 and comprising a source pad 12a and a source finger 12b having a step-like side portion 12c tapering in length from one side connected to the source pad 12a toward the other side; a drain electrode 14 comprising a drain pad 14a and a drain finger 14b having a side portion 14c opposed to the side portion 12c tapering in length from one side connected to the drain pad 14a to the other side; and a gate electrode 16 having a curved portion 16 in between a step 12d of the source finger 12b and a step 14d of the drain finger 14b and curving along the source finger 12a and the drain finger 14a. The side portion 12c and the side portion 14c are shaped in symmetry with respect to the midpoint of a line segment 9 connecting the other side of the source finger 12b and the other side of the drain finger 14b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
