发明名称 DOPING MINOR ELEMENTS INTO METAL BUMPS
摘要 PURPOSE: Doping minor elements into metal bumps are provided to improve manufacturing costs and the property of a metal pump by adding some elements of a plurality of types. CONSTITUTION: In doping minor elements into metal bumps, a wafer including a substrate(10) is provided. A semiconductor device(14) is formed in the surface of the substrate. An interconnect structure(12) is electrically combined with the semiconductor device. The interconnect structure comprises an inter-layer dielectric and an inter-metal dielectric. A metal pad(28) is formed on the interconnect structure.
申请公布号 KR20120010555(A) 申请公布日期 2012.02.03
申请号 KR20100126847 申请日期 2010.12.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HWANG CHIEN LING;LIN CHENG CHUNG;TSAI HUI JUNG;LIM ZHENG YI;LIU CHUNG SHI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址