发明名称 |
DOPING MINOR ELEMENTS INTO METAL BUMPS |
摘要 |
PURPOSE: Doping minor elements into metal bumps are provided to improve manufacturing costs and the property of a metal pump by adding some elements of a plurality of types. CONSTITUTION: In doping minor elements into metal bumps, a wafer including a substrate(10) is provided. A semiconductor device(14) is formed in the surface of the substrate. An interconnect structure(12) is electrically combined with the semiconductor device. The interconnect structure comprises an inter-layer dielectric and an inter-metal dielectric. A metal pad(28) is formed on the interconnect structure. |
申请公布号 |
KR20120010555(A) |
申请公布日期 |
2012.02.03 |
申请号 |
KR20100126847 |
申请日期 |
2010.12.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HWANG CHIEN LING;LIN CHENG CHUNG;TSAI HUI JUNG;LIM ZHENG YI;LIU CHUNG SHI |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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