| 摘要 |
<P>PROBLEM TO BE SOLVED: To correctly obtain a chip-specific write and erase times. <P>SOLUTION: A memory 102 comprises: a pulse counter 106a for counting, during an actual rewrite operation, the number of applications of a predetermined voltage pulse required for the rewrite operation; a pulse count storage register 106b for storing the number of applications of the predetermined voltage pulse, which is counted by the pulse counter 106a; and a required time output part 107 for outputting data indicating a time required for the write operation on the basis of the number of applications stored in the pulse count storage register 106b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
