| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of high-speed operation by solving the problem in which a short-time voltage pulse cannot be applied to a storage element from a common line side. <P>SOLUTION: A semiconductor storage device 1 comprises a memory cell array 100 in which a plurality of memory cells including two-terminal storage elements and selection transistors connected in series are arranged in matrix, a first voltage application circuit 101 for applying a rewriting voltage pulse to a first bit line, and a second voltage application circuit 102 for applying a pre-charge voltage to a bit line and a common line. The memory cell is rewritten in a manner that, after both ends of the memory cell are pre-charged in advance by the second voltage application circuit 102 at the same voltage, the first voltage application circuit 101 applies via the bit line the rewriting voltage pulse to one end of the memory cell to be rewritten. During the application of the rewriting voltage pulse, the second voltage application circuit 102 keeps applying the pre-charge voltage to the other end of the memory cell via the common line CML. <P>COPYRIGHT: (C)2012,JPO&INPIT |
