| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device containing a solid-state image pickup element for forming a mask on a region exceeding the limit of mask fining, reducing the number of processes, and improving reliability, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device has an element separation region 23 by an impurity region, and a mask 29 for obstructing ion implantation remains on the element separation region 23. A mask 29 for obstructing ion implantation is formed with the component of a semiconductor element, for example with the same configuration as a gate control section 25 in a MOS transistor. COPYRIGHT: (C)2006,JPO&NCIPI |
