发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus in which a stage can be moved at a speed causing no slip of a sample, and to provide a charged particle beam lithography method. <P>SOLUTION: The charged particle beam lithography apparatus 100 comprises a movable XY stage 105 which supports the rear face of a sample subjected to lithography, an acceleration acquisition unit 32 which receives type information from which the type of rear face of the sample can be grasped and acquires maximum acceleration when the stage is moved according to the type of rear face of the sample defined in the type information, and a drawing unit 150 which draws a pattern on the sample by using a charged particle beam while moving the stage so as not to exceed the maximum acceleration. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012054360(A) 申请公布日期 2012.03.15
申请号 JP20100195050 申请日期 2010.08.31
申请人 NUFLARE TECHNOLOGY INC 发明人 TAKEKOSHI HIDEKAZU
分类号 H01L21/027;H01L21/68 主分类号 H01L21/027
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