| 摘要 |
<P>PROBLEM TO BE SOLVED: To boost a replica word line for selecting a replica cell and a word line for selecting a memory cell by using voltage having a certain difference. <P>SOLUTION: The semiconductor storage device includes a drive voltage supply circuit 10, a replica word line driver 20, a replica word line WLd, a replica cell array 21, a replica bit line REP-BL, a sense amplifier enable output circuit 23, a word line driver 30, word lines WL<0>to WL<m>, a memory cell array 31, bit lines BL and BLB, and a sense amplifier 33. <P>COPYRIGHT: (C)2012,JPO&INPIT |
