METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE

摘要

PROBLEM TO BE SOLVED: To form an oxide tantalum-based film having a favorable step-coating property while suppressing an oxygen concentration in the film.

SOLUTION: A conductive oxide and nitride tantalum film lacking in oxygen with respect to tantalum and nitrogen stoichiometrically is formed on a substrate by alternately repeating, a plurality of times: a process in which a raw material gas and a nitriding agent are fed into a treatment chamber accommodated with the substrate under a condition that a CVD reaction is generated, and a nitride tantalum layer is formed on the substrate; and a process in which an oxidizing agent is fed into the treatment chamber to oxidize the nitride tantalum layer under a condition that an oxidization reaction caused by the oxidizing agent of the nitride tantalum layer is unsaturated.

COPYRIGHT: (C)2012,JPO&INPIT