| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to form a nitride semiconductor layer without a crack using the difference of thermal expansion coefficient between different materials. CONSTITUTION: A substrate(110) has a first thermal expansion coefficient. A plurality of primary ferrous patterns(115) is separated from each other on the substrate, and has a second thermal coefficient. A plurality of compound semiconductor layers is formed on the upper part of the substrate and the primary ferrous pattern. The compound semiconductor layer has a third thermal expansion coefficient which is between the first thermal expansion coefficient and the second thermal expansion coefficient of the substrate.
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