| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of an isolated gate power semiconductor active element, that generally has many gate electrodes arranged in parallel with a stack of barrier metal films and thick aluminum-based electrode films over the gate electrodes with interlayer insulation films interposed therebetween, in which: voids may arise along with gate electrodes arranged in parallel to each other if aluminum-based electrode films are filled therebetween; and when wet etching is performed, any void may cause penetration of etchant therethrough and thus over etching of an active cell section where the aluminum-based electrode films should remain. <P>SOLUTION: An isolated gate power semiconductor device includes: a plurality of gate electrodes provided so as to protrude outward from an active cell region; and a gate electrode coupling part for coupling the gate electrodes together at the active cell region, the top of the gate electrode coupling part being covered with a metal electrode covering the active cell region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
