| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor, having TEG usable for a semiconductor element formed of a semiconductor other than of silicon. <P>SOLUTION: A semiconductor device 1a includes an SBD portion 2a and a TEG portion 3a for measuring the electric characteristics of the SBD portion 2a. The SBD portion 2a includes: an n-type SiC drift layer 8; and a first Schottky electrode 13 formed on the SiC drift layer 8 with contact to the surface 9 of the SiC drift layer 8. The TEG portion 3a includes: a p-type ion implantation layer 18a formed on a point including the surface 9 of the SiC drift layer 8; a second Schottky electrode 21a formed on the SiC drift layer 8 with contact to the surface 9 of the SiC drift layer 8; and an electrode pad 22 formed on the ion implantation layer 18a with electric connection to the second Schottky electrode 21a, in a manner not to contact to the SiC drift layer 8. <P>COPYRIGHT: (C)2012,JPO&INPIT |
