NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to increase internal quantum efficiency and improve the luminous efficiency of a light emitting device by reducing the crystal defect of a semiconductor layer due to a buffer layer. CONSTITUTION: A base substrate is prepared(S21). A nitride nucleation layer of a nitride material is formed on the base substrate(S23). A buffer layer is formed on the nitride nucleation layer by varying the supply amount of a Vgroup source(S25). An N-type semiconductor layer having PN junction is formed on the buffer layer(S27). An active layer is formed on the n-type semiconductor layer(S29). A p-type semiconductor layer is formed on the active layer(S31).