发明名称 |
SEMICONDUCTOR DEVICE AND DRIVING METHOD FOR THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To reduce power consumption of, and increase the size and definition of a display device by suppressing variation in threshold voltage of a transistor and reducing the number of contact points of a driver IC mounted on a display panel. <P>SOLUTION: A gate electrode of a transistor which easily deteriorates is connected to a wire to which a high potential is supplied via a first switching transistor and a wire to which a low potential is supplied via a second switching transistor. By inputting a clock signal to the gate electrode of the first switching transistor and an inversion clock signal to the gate electrode of the second switching transistor, the high potential and the low potential are alternately supplied to the gate electrode of the transistor which easily deteriorates. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012095303(A) |
申请公布日期 |
2012.05.17 |
申请号 |
JP20110241436 |
申请日期 |
2011.11.02 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
UMEZAKI ATSUSHI;MIYAKE HIROYUKI |
分类号 |
H03K3/356;G02F1/133;G02F1/1368;G09G3/20;G09G3/30;G09G3/36;G11C19/00;G11C19/28;H01L29/786;H01L51/50 |
主分类号 |
H03K3/356 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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