Semiconductor crystal pulling - with electron beam heating and contrarotating inclined bars

摘要

A semiconductor crystal is pulled from a silicon melt which is heated at one side by an electron beam up to about the centre of its circular surface. A nearly cylindrical semiconductor bar is obtd. by moving a seed crystal eccentrically to the axis of the rotating melt. The cylindrical semiconductor bar contg. the melt is slightly inclined to the vertical (max 10 degrees) and rotates at 5-50 (10) rev/min. The crystal pulling bar rotates at 10-100 (50) rev/min.