SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A substrate processing apparatus, a baffle structure, and a manufacturing method of a semiconductor device are provided to enhance production efficiency of plasma by sending gas along the inner wall of a reaction container. CONSTITUTION: A coil is installed at the outer circumstance of a reaction container of cylinder shape. A gas induction hole(433) is installed at an opening(454a). A first board(460a) is installed between the gas induction hole and the upper side end of the coil. A second board(460b) is installed between the first board and the upper side end of the coil. A substrate processing chamber is installed at the other direction with the opening. A gas ventilation unit is connected with the substrate processing chamber.