发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device or a semiconductor storage device for holding data for a longer period of time. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer 152a including a pair of impurity regions; a second semiconductor layer 152b provided apart from the first semiconductor layer and formed of the same material as the first semiconductor layer; a first insulation layer 153 provided on the first and second semiconductor layers; a first conductive layer 154 overlapping with the first semiconductor layer via the first insulation layer 153; a third semiconductor layer 156 overlapping with the first conductive layer via the first insulation layer 153 and formed of a different material from the first semiconductor layer; a second conductive layer 157b electrically connected to the first conductive layer and the third semiconductor layer; a third conductive layer 157a electrically connected to the third semiconductor layer 156 and formed of the same material as the second conductive layer; a second insulation layer 158 provided on the third semiconductor layer, the second conductive layer, and the third conductive layer; and a fourth conductive layer 159 overlapping with the third semiconductor layer via the second insulation layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012114422(A) |
申请公布日期 |
2012.06.14 |
申请号 |
JP20110238450 |
申请日期 |
2011.10.31 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KATO KIYOSHI;SHIONOIRI YUTAKA;NAGATSUKA SHUHEI;YAKUBO HIROTO;KOYAMA JUN |
分类号 |
H01L21/8242;H01L21/336;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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