发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device or a semiconductor storage device for holding data for a longer period of time. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer 152a including a pair of impurity regions; a second semiconductor layer 152b provided apart from the first semiconductor layer and formed of the same material as the first semiconductor layer; a first insulation layer 153 provided on the first and second semiconductor layers; a first conductive layer 154 overlapping with the first semiconductor layer via the first insulation layer 153; a third semiconductor layer 156 overlapping with the first conductive layer via the first insulation layer 153 and formed of a different material from the first semiconductor layer; a second conductive layer 157b electrically connected to the first conductive layer and the third semiconductor layer; a third conductive layer 157a electrically connected to the third semiconductor layer 156 and formed of the same material as the second conductive layer; a second insulation layer 158 provided on the third semiconductor layer, the second conductive layer, and the third conductive layer; and a fourth conductive layer 159 overlapping with the third semiconductor layer via the second insulation layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012114422(A) 申请公布日期 2012.06.14
申请号 JP20110238450 申请日期 2011.10.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KATO KIYOSHI;SHIONOIRI YUTAKA;NAGATSUKA SHUHEI;YAKUBO HIROTO;KOYAMA JUN
分类号 H01L21/8242;H01L21/336;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
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