摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric element in which a ferroelectric layer is processed to have a taper angle of 70° or larger by dry etching, and etching products do not adhere to the sidewall. <P>SOLUTION: A resist 15 composed of an organic matter is placed on a processed object where a lower electrode film 12, a ferroelectric layer 13 and an upper electrode film 14 are laminated, in this order, on a substrate 11. A mixed gas of a gas containing a halogen element (excluding Cl<SB POS="POST">2</SB>) in the chemical structure and a rare gas is plasmatized, and brought into contact with the resist 15 and a processed object 21. Furthermore, a bias voltage is applied to an electrode under the processed object 21 so as to inject ions in the plasma, and anisotropic etching is performed. The side surface is etched to have a taper angle of 70° or larger, and etching products do not adhere to the side surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |