| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask blank to which EB defect correction can be applied and which can reduce a film thickness of a light-shielding film. <P>SOLUTION: In a mask blank 10 that is used for produce a transfer mask to which an ArF exposure light is applied and has a light-shielding film 2 on a light-transmitting substrate 1, the light-shielding film 2 has at least a two-layer structure of a lower layer containing a material including a transition metal, silicon and nitrogen as a main component, and an upper layer containing a material including the transition metal, the silicon and the nitrogen as a main component, and a ratio of an etching rate of the lower layer with respect to an etching rate of the upper layer in an etching operation of supplying a substance containing fluorine to an object portion and irradiating the object portion with charged particles is 1.0 or more and 5.0 or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
