SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device is provided to control a threshold voltage of a MISFET in a corresponding part by introducing impurities in a back gate semiconductor region. CONSTITUTION: A semiconductor chip(2) is formed on a P-type single crystal silicon substrate(1s). An SOI region(8) is formed on a first main surface(1a) of the semiconductor chip. A first N channel MISFET(Metal Insulator Semiconductor Field Effect Transistor) region(8n) and a first P channel MISFET region(8p) are formed within the SOI(Silicon On Insulator Region). A first gate insulating layer(35sn) and a first gate electrode film(36sn) are formed within the first N channel MISFET region. A second gate insulating layer(35sp) and a second gate electrode film(36sp) are formed within the first P channel MISFET region.