METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing damage to a surface of a silicon carbide substrate in laser annealing.

SOLUTION: A silicon carbide substrate having a surface is prepared. Impurity regions (123 to 125) are formed by injecting ions into the silicon carbide substrate from the surface. Annealing for activating the impurity regions are performed. The annealing include a step of irradiating the surface of the silicon carbide substrate with a first laser light with a first wavelength and a step of irradiating the surface of the silicon carbide substrate with a second laser light with a second wavelength. The silicon carbide substrate has a first and second extinction coefficients for the first and second wavelengths, respectively. The ratio of the first extinction coefficient for the first wavelength is greater than 5×105/m. The ratio of the second extinction coefficient for the second wavelength is less than 5×105/m.

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