AMINOSILANES FOR SHALLOW TRENCH ISOLATION FILMS

摘要

PROBLEM TO BE SOLVED: To provide a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates such as silicon wafers having one or more integrated circuit structures contained thereon.

SOLUTION: The process comprises the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; and heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

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