发明名称 |
METHOD OF FORMING METAL OXIDE HARDMASK |
摘要 |
<p>PURPOSE: A method for forming a metal oxide hard mask on a template is provided to control the collapse of a pattern by minimizing the difference of film stress between a spacer film and core material. CONSTITUTION: A photo-resist(41) is formed on a base film(42). A spacer film(43) covers the photo-resist and the base film. A spacer is formed on a sidewall of the photo-resist. An inner wall(43b) of the spacer does not have an overhang portion at the top edge. The distance between top edges is similar to the distance between vertical portions of the spacer. A pattern transfer layer(44) is formed on a substrate(45). The pattern transfer layer is etched in a vertical direction.</p> |
申请公布号 |
KR20120075397(A) |
申请公布日期 |
2012.07.06 |
申请号 |
KR20110142924 |
申请日期 |
2011.12.27 |
申请人 |
ASM JAPAN K.K. |
发明人 |
HA, JEONG SEOK;HIDEAKI FUKUDA;SHINTARO KAIDO |
分类号 |
H01L21/312;H01L21/205 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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