| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which performs determination of verification read-out by wired OR structure without using a fuse, and whose chip size is reduced in comparison with the conventional manner to the extent that no fuse is provided. <P>SOLUTION: A nonvolatile semiconductor memory device has: a memory cell array in which each of a plurality of bit lines and a plurality of word lines intersect each other, and a nonvolatile memory cells are arranged at intersected parts; a fault replacement circuit with a redundant bit line to be replaced with a defective bit line of the memory cell array; a page buffer which is provided for every bit line and includes a latch for storing data written in or read out from a memory cell selected by a word line; a block determination circuit which determines the data read out from the bit line by verification processing and written in the latch of the page buffer in block by unit of a plurality of bit lines; and a pseudo data writing circuit which writes pseudo data in a latch in the page buffer corresponding to the defective bit line. <P>COPYRIGHT: (C)2012,JPO&INPIT |
