| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing crystal semiconductor particles, by which the crystal semiconductor particles having high crystallinity and a small variation in shape and mass are reasonably produced and supplied at a low cost. <P>SOLUTION: The crystal semiconductor particles are produced by sticking a fine powder composed of the same kind of semiconductor as the semiconductor particles onto the surface of the semiconductor particles, then arranging the resulting particles in a heating vessel, preliminarily heating the particles at a temperature lower than the melting point of the semiconductor to oxidize or nitride the fine powder, and at the same time to form a coating film containing an oxide or a nitride as a main component on the surface of the semiconductor particles, further heating the resulting semiconductor particles to a temperature equal to or higher than the melting point of the semiconductor to melt and form spherical molten bodies, and cooling and solidifying the molten bodies. <P>COPYRIGHT: (C)2012,JPO&INPIT |
