METHOD OF FABRICATING DUAL POLY-GATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method of fabricating a dual poly-gate and a method of fabricating a semiconductor device using the same are provided to obtain the properties of a p-type polygate and a n-type polygate while reducing manufacturing costs and the number of processing steps by using only a single piece of a photomask. CONSTITUTION: A polysilicon layer is formed on a substrate(110) having a first region(101) and a second region(102). A mask layer pattern is formed to expose the polysilicon layer from the second region. The impurity doping of the second conductive type is performed for the polysilicon layer on the second region exposed by the mask layer pattern. The mask layer pattern is removed. A first poly silicon layer pattern(133) of the first region and a second poly silicon layer pattern(134) of the second region are formed by patterning the polysilicon layer.