| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which reduces crystal defects with inhibiting diffusion of implanted impurities. <P>SOLUTION: A semiconductor device manufacturing method of an embodiment comprises a step of forming an impurity implanted layer 9 obtained by implanting, into the semiconductor layer 1, first impurities 80 containing phosphorous or boron in a form of molecular ion and second impurities 81 containing carbon, fluorine or nitrogen of an implantation amount less than that of phosphorous or boron in a form of molecular ion, or containing carbon of an implantation amount less than that of phosphorous or boron in a form of atomic ion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
