发明名称 |
FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF |
摘要 |
PURPOSE: A flash memory device and a method for generating a word line voltage thereof are provided to efficiently read and verify data distributed in a negative voltage region by continuously generating the negative word line voltage without a word line recovery. CONSTITUTION: A flash memory cell array(110) comprises a plurality of flash memory cells arranged in an intersection between a plurality of word lines and a plurality of bit lines. A voltage generating unit(170) generates a plurality of word line voltages applied to the word lines. A control logic unit(190) controls a voltage generation operation of a voltage generating unit. The voltage generating unit alternatively generates a negative word line voltage and a positive word lines voltage. |
申请公布号 |
KR20120079681(A) |
申请公布日期 |
2012.07.13 |
申请号 |
KR20110001010 |
申请日期 |
2011.01.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE YOUNG |
分类号 |
G11C16/34;G11C16/06;G11C16/30 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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