发明名称 FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF
摘要 PURPOSE: A flash memory device and a method for generating a word line voltage thereof are provided to efficiently read and verify data distributed in a negative voltage region by continuously generating the negative word line voltage without a word line recovery. CONSTITUTION: A flash memory cell array(110) comprises a plurality of flash memory cells arranged in an intersection between a plurality of word lines and a plurality of bit lines. A voltage generating unit(170) generates a plurality of word line voltages applied to the word lines. A control logic unit(190) controls a voltage generation operation of a voltage generating unit. The voltage generating unit alternatively generates a negative word line voltage and a positive word lines voltage.
申请公布号 KR20120079681(A) 申请公布日期 2012.07.13
申请号 KR20110001010 申请日期 2011.01.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE YOUNG
分类号 G11C16/34;G11C16/06;G11C16/30 主分类号 G11C16/34
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