| 摘要 |
PURPOSE: A semiconductor memory device is provided to secure read margin by controlling verification reference values and a read reference current value according to the change of an operational temperature. CONSTITUTION: A temperature sensing unit(110) generates a temperature sensing signal by sensing an operational temperature. A current control unit(120) generates a read current control signal and a verification current control signal based on the temperature sensing signal. A read current generating unit(130) generates a read current in response to a read current control signal. A verification current generating unit(140) generates a verification current based on the verification current control signal. |
