发明名称 REDUCED NUMBER OF MASKS FOR IC DEVICE WITH STACKED CONTACT LEVELS
摘要 <p>PURPOSE: A reduced number of masks for an IC(Integrated Circuit) device is provided to reduce manufacturing costs by reducing a necessary region for forming a plurality of contact levels. CONSTITUTION: A mounting portion of contact levels(160-1-160-4) is provided to an interconnection region. Only a set of etched masks of N is used to generate the layers of 2N of an interconnection contact region on the mounting portion of contact levels. A partial region is removed from any upper layer covering an upper portion of the mounting portion of contact levels in the interconnection region. Contact openings which are extended from a surface film to s each contact level are generated by etching the interconnection region at N times by using masks in a selected order and providing access to landing regions(161-1a, 161-1b).</p>
申请公布号 KR20120084241(A) 申请公布日期 2012.07.27
申请号 KR20110044687 申请日期 2011.05.12
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN SHIH HUNG;LUE HANG TING
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
代理机构 代理人
主权项
地址