发明名称 |
REDUCED NUMBER OF MASKS FOR IC DEVICE WITH STACKED CONTACT LEVELS |
摘要 |
<p>PURPOSE: A reduced number of masks for an IC(Integrated Circuit) device is provided to reduce manufacturing costs by reducing a necessary region for forming a plurality of contact levels. CONSTITUTION: A mounting portion of contact levels(160-1-160-4) is provided to an interconnection region. Only a set of etched masks of N is used to generate the layers of 2N of an interconnection contact region on the mounting portion of contact levels. A partial region is removed from any upper layer covering an upper portion of the mounting portion of contact levels in the interconnection region. Contact openings which are extended from a surface film to s each contact level are generated by etching the interconnection region at N times by using masks in a selected order and providing access to landing regions(161-1a, 161-1b).</p> |
申请公布号 |
KR20120084241(A) |
申请公布日期 |
2012.07.27 |
申请号 |
KR20110044687 |
申请日期 |
2011.05.12 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH HUNG;LUE HANG TING |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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