NONVOLATILE RESISTIVE-SWITCHING RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile resistive-switching random access memory device and a manufacturing method thereof are provided to perform a resistance switching operation without forming process by controlling thermal treatment temperature of a metal oxide layer. CONSTITUTION: A bottom electrode(20) is formed on a semiconductor substrate(10). A metal oxide layer(30) is formed on the bottom electrode. The metal oxide layer is thermally processed. An upper electrode(40) is formed on the metal oxide layer. A third dielectric layer is formed on the upper electrode.